september 2009 doc id 16300 rev 1 1/8 8 BULT3P3 medium voltage fast-switching pnp power transistor features low spread of dynamic parameters minimum lot-to-lot spread for reliable operation very high switching speed application electronic ballast for fluorescent lighting description the device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and m edium voltage capability. it uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide rbsoa. the device is expressly designed for a new solution to be used in compact fluorescent lamps, where it is coupled with the bult3n4, its complementary npn transistor. figure 1. internal schematic diagram 3 2 1 sot-32 table 1. device summary order code marking package packing BULT3P3 BULT3P3 sot-32 tube www.st.com
electrical ratings BULT3P3 2/8 doc id 16300 rev 1 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v be = 0) -300 v v ceo collector-emitter voltage (i b = 0) -200 v v ebo emitter-base voltage (i c = 0, i b = - 1.5 a, t p < 100 s, t j < 150 c) v (br)ebo v i c collector current -3 a i cm collector peak current (t p < 5 ms) -6 a i b base current -1.5 a i bm base peak current (t p < 5 ms) -3 a p tot total dissipation at t c = 25 c 32 w t stg storage temperature -65 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thjc thermal resistance junction-case max 3.9 c/w
BULT3P3 electrical characteristics doc id 16300 rev 1 3/8 2 electrical characteristics t case = 25 c unless otherwise specified table 4. electrical characteristics symbol parameter test conditions min. typ. max. unit i ces collector cut-off current (v be = 0) v ce = - 300 v v ce = - 300 v t c = 125 c -0.1 -0.5 ma ma v (br)ebo emitter-base breakdown voltage (i c = 0) i e = - 10 ma -6 -12 v v ceo(sus) (1) 1. pulse test: pulse duration 300 s, duty cycle 2 % collector-emitter sustaining voltage (i b = 0) i c = - 10 ma -200 v v ce(sat) (1) collector-emitter saturation voltage i c = - 0.7 a i b = - 0.1 a i c = - 1 a _ _ i b = - 0.2 a -0.5 -0.5 v v v be(sat) (1) base-emitter saturation voltage i c = - 0.5 a __ i b = - 0.1 a i c = - 1 a ___ i b = - 0.2 a i c = - 2 a ___ i b = - 0.4 a -1.0 -1.1 -1.3 v v v h fe dc current gain i c = - 10ma v ce = - 5 v i c = - 0.75 a v ce = - 5 v i c = - 2 a v ce = - 5 v 10 22 4 28 36 t r t s t f resistive load rise time storage time fall time i c = - 0.7 a _ v cc = - 150 v i b(on) = - i b(off) = 140 ma t p = 30 s 60 1.2 70 1.6 100 ns s ns t s t f inductive load storage time fall time i c = - 1 a _ i b(on) = 100 ma v be(off) = 5 v r bb = 0 v clamp = 150 v l = 1 mh 110 35 180 70 ns ns
electrical characteristics BULT3P3 4/8 doc id 16300 rev 1 2.1 test circuits figure 2. resistive load switching test circuit 1. fast electronic switch 2. non-inductive resistor figure 3. inductive load switching test circuit 1. fast electronic switch 2. non-inductive resistor 3. fast recovery rectifier
BULT3P3 package mechanical data doc id 16300 rev 1 5/8 3 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data BULT3P3 6/8 doc id 16300 rev 1
BULT3P3 revision history doc id 16300 rev 1 7/8 4 revision history table 5. document revision history date revision changes 25-sep-2009 1 initial release
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